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| SEMICONDUCTOR TECHNICAL DATA High frequency rectification. Switching power supply. L KDR400S SCHOTTKY BARRIER TYPE DIODE E B L FEATURES Low Forward Voltage : VF max=0.55V. A G DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 IO=500mA recification possible. 3 D B C D E G H J K H 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature ) SYMBOL VRRM VR IO IFSM Tj Tstg RATING 40 40 0.5 3 125 -55 125 UNIT V V A A C N P P L M N P M 3 1. NC 2. ANODE 3. CATHODE 2 1 K SOT-23 Marking Lot No. Type Name DJ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current VR VF IR1 IR2 CT1 CT2 ) TEST CONDITION IR=1mA IF=0.5A VR=10V VR=25V VR=0V, f=1MHz VR=10V, f=1MHz MIN. 40 TYP. 0.45 8 132 25 MAX. 0.55 30 50 UNIT V V A SYMBOL Total Capacitance J pF 2003. 2. 25 Revision No : 1 1/2 KDR400S C T - VR TERMINAL CAPACITANCE C T (pF) 140 120 100 80 60 40 20 0 0 10 20 30 40 REVERSE CURRENT I R (A) 10 2 I R - VR 10 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE V R (V) I F - VF 10 FORWARD CURRENT I F (A) 10 10 10 10 10 1 0 100 200 300 400 500 6 5 4 3 2 FORWARD VOLTAGE V F (mV) 2003. 2. 25 Revision No : 1 2/2 |
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